Light-emitting polymer space-charge-limited transistor
نویسندگان
چکیده
Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly 3-hexylthiophene . Yellow poly para-phenylene vinylene derivative is used as the yellow emitting material. As the cathode is fixed at −12 V and the grid base voltage varies from 0.9 to −0.9 V the light emission is turned on and off with on luminance up to 1208 cd /m2. The current efficiency of the light-emitting transistor is 10 cd/A. © 2008 American Institute of Physics. DOI: 10.1063/1.3027057
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